MJD200T5G
TRANS NPN 25V 5A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD200T5G is an NPN bipolar junction transistor designed for high-current switching applications. Featuring a collector-emitter breakdown voltage of 25 V and a continuous collector current rating of 5 A, this surface-mount device is housed in a TO-252-3, DPAK package. It exhibits a transition frequency of 65 MHz and a maximum power dissipation of 1.4 W. The transistor provides a minimum DC current gain (hFE) of 45 at 2A and 1V, with a Vce saturation voltage of 1.8V at 1A collector current. The collector cutoff current (ICBO) is rated at a maximum of 100 nA. This component is suitable for use in automotive and industrial power management systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Frequency - Transition | 65MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1.4 W |