MJD200T4
TRANS PWR NPN 5A 25V DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD200T4 is a high-performance NPN bipolar junction transistor designed for demanding power applications. This component features a maximum collector current (Ic) of 5 A and a collector-emitter breakdown voltage (Vce) of 25 V. With a transition frequency (fT) of 65 MHz and a maximum power dissipation of 12.5 W, it is well-suited for switching and amplification tasks. The minimum DC current gain (hFE) is specified as 45 at 2 A and 1 V. The transistor exhibits a Vce(sat) of 300 mV at 50 mA base current and 500 mA collector current. Packaged in a DPAK (TO-252-3) surface-mount configuration, it is supplied on cut tape. The operating temperature range is from -65°C to 150°C (TJ). This device finds application in industrial control, automotive electronics, and power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Frequency - Transition | 65MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 12.5 W |
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