MJD200
TRANS NPN 25V 5A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD200 is an NPN bipolar junction transistor designed for surface mount applications. This component features a collector emitter breakdown voltage of 25V and a maximum collector current of 5A. With a transition frequency of 65MHz and a maximum power dissipation of 1.4W, it is suitable for power switching and amplification in various industrial and consumer electronics. The DC current gain (hFE) is a minimum of 45 at 2A and 1V, with a collector cutoff current of 100nA (ICBO). The saturation voltage (Vce Sat) at 1A collector current and 5A is 1.8V. Packaged in a TO-252-3, DPAK (SC-63) configuration, the MJD200 operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V |
| Frequency - Transition | 65MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 1.4 W |
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