MJD18002D2T4G
TRANS NPN 450V 2A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD18002D2T4G is an NPN bipolar junction transistor designed for high-voltage applications. Featuring a collector-emitter breakdown voltage of 450V and a continuous collector current capability of 2A, this device is suitable for power switching and amplification circuits. The transistor exhibits a minimum DC current gain (hFE) of 6 at 1A and 1V, with a collector saturation voltage (Vce Sat) of 750mV at 200mA collector current and the corresponding base current. Its transition frequency is 13MHz, and it can dissipate up to 50W of power. The component is housed in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) surface-mount package, supplied on tape and reel. Operating temperature range is from -65°C to 150°C. This component finds application in power supplies, lighting control, and general-purpose high-voltage switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 200mA, 1A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 1A, 1V |
| Frequency - Transition | 13MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 450 V |
| Power - Max | 50 W |
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