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MJD128T4

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MJD128T4

TRANS PNP DARL 120V 8A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJD128T4 is a PNP Darlington bipolar transistor designed for demanding applications. Featuring a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 8A, this device is suitable for power switching and amplification tasks. The MJD128T4 exhibits a high DC current gain (hFE) of at least 1000 at 4A/4V, and a transition frequency of 4MHz. Its low saturation voltage, specified at 4V maximum for 80mA base current and 8A collector current, minimizes power loss. Provided in a surface-mount DPAK (TO-252-3) package, it is supplied on tape and reel for automated assembly. This component finds utility in power management, motor control, and lighting control systems. The maximum power dissipation is rated at 1.75W, with an operating temperature range of -65°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition4MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max1.75 W

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