MJD122TF
TRANS NPN DARL 100V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD122TF is an NPN Darlington bipolar junction transistor designed for demanding applications. This surface-mount device, packaged in a TO-252-3, DPAK, offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 8A. It features a high DC current gain (hFE) of 1000 minimum at 4A/4V, ensuring efficient amplification. The saturation voltage (Vce Sat) is a maximum of 4V at 80mA collector current and 8A collector current. With a maximum power dissipation of 1.75W and an operating temperature up to 150°C (TJ), this transistor is suitable for power switching and amplification circuits in industrial and automotive sectors. The MJD122TF is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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