MJD122-1G
TRANS NPN DARL 100V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD122-1G is an NPN Darlington bipolar transistor designed for surface mount applications. This component offers a 100 V collector-emitter breakdown voltage and a continuous collector current capability of 8 A. It features a minimum DC current gain (hFE) of 1000 at 4 A and 4 V. The transistor has a transition frequency of 4 MHz and a maximum power dissipation of 1.75 W. The saturation voltage (Vce Sat) is a maximum of 4 V at 80 mA base current and 8 A collector current. The device is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package and operates within a temperature range of -65°C to 150°C. This component is commonly utilized in power switching and amplification circuits across various industrial sectors, including industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 80mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 4A, 4V |
| Frequency - Transition | 4MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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