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MJD117RLG

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MJD117RLG

TRANS PNP DARL 100V 2A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MJD117RLG is a PNP Darlington bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 2A. It offers a high DC current gain (hFE) of 1000 minimum at 2A and 3V. The MJD117RLG has a transition frequency of 25MHz and a maximum power dissipation of 1.75W. The Vce saturation voltage is specified at 3V maximum for 40mA base current and 4A collector current. Packaged in a TO-252-3, DPAK, this device is supplied in tape and reel. This transistor is suitable for use in power switching and amplification applications across various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition25MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.75 W

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