MJD117-1G
TRANS PNP DARL 100V 2A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD117-1G is a PNP Darlington bipolar junction transistor (BJT) designed for robust power switching applications. This component features a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 2A. With a DC current gain (hFE) of a minimum 1000 at 2A and 3V, and a transition frequency of 25MHz, it offers efficient amplification and switching characteristics. The maximum power dissipation is rated at 1.75W.
The MJD117-1G is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) for through-hole mounting. It operates within an ambient temperature range of -65°C to 150°C. This device is commonly utilized in power supply circuits, motor control, and general-purpose switching within industrial and consumer electronics. The collector cutoff current is a maximum of 20µA, and the Vce saturation is a maximum of 3V at 40mA bias and 4A collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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