MJD117-001
TRANS PNP DARL 100V 2A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD117-001 is a PNP bipolar junction transistor featuring a Darlington configuration. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of up to 2A. With a maximum power dissipation of 1.75W, it is suitable for applications requiring significant current gain, specified at a minimum of 1000 at 2A collector current and 3V collector-emitter voltage. The transition frequency is 25MHz. This device is housed in an IPAK package for through-hole mounting and operates within a temperature range of -65°C to 150°C. It finds utility in power switching and amplification circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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