MJD117
TRANS PNP DARL 100V 2A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJD117 is a PNP bipolar junction transistor, specifically a Darlington configuration, designed for robust performance in power switching applications. This component offers a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 2A. Its high DC current gain, rated at a minimum of 1000 at 2A and 3V, ensures efficient amplification. The transition frequency is 25MHz, suitable for various switching frequencies. With a maximum power dissipation of 1.75W, it is housed in a surface-mount DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63) package, facilitating efficient thermal management. The MJD117 finds application in power control, lighting, and general-purpose amplification circuits across industrial and consumer electronics sectors. It operates within a temperature range of -65°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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