MJD112RL
TRANS NPN DARL 100V 2A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD112RL is a robust NPN Darlington bipolar junction transistor designed for demanding applications. This device boasts a 100V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of 2A, with a saturation voltage (Vce(sat)) of 3V at 40mA/4A. Featuring a high DC current gain (hFE) of 1000 minimum at 2A/3V and a transition frequency of 25MHz, the MJD112RL is well-suited for switching and amplification tasks. Its surface mount DPAK package (TO-252-3, DPAK) and 1.75W power dissipation make it ideal for use in power supply circuits, motor control, and general-purpose amplification across various industrial and consumer electronics sectors. The component operates within an extended temperature range of -65°C to 150°C and is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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