MJD112-001
TRANS NPN DARL 100V 2A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJD112-001 is an NPN-Darlington bipolar junction transistor designed for robust power switching applications. This device offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 2A. Featuring a high DC current gain (hFE) of at least 1000 at 2A and 3V, it ensures efficient amplification. The MJD112-001 operates with a maximum power dissipation of 1.75W and a transition frequency of 25MHz. Its saturation voltage (Vce Sat) is a maximum of 3V at 40mA base current and 4A collector current. The transistor is housed in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) suitable for through-hole mounting. This component finds application in power supplies, motor control, and general-purpose switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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