MJB45H11
TRANS PNP 80V 10A D2PAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJB45H11 is a PNP bipolar junction transistor designed for demanding applications. This device features an 80V collector-emitter breakdown voltage and a continuous collector current capability of 10A. With a transition frequency of 40MHz and a maximum power dissipation of 2W, it is suitable for power switching and amplification circuits. The DC current gain (hFE) is specified at a minimum of 40 at 4A collector current and 1V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 1V at 400mA base current and 8A collector current. This component is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management and automated assembly. Typical industries utilizing this transistor include automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | D2PAK |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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