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MJB44H11

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MJB44H11

TRANS NPN 80V 10A D2PAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJB44H11 is an NPN bipolar junction transistor designed for demanding applications. It features a maximum collector current of 10A and a collector-emitter breakdown voltage of 80V. With a transition frequency of 50MHz and a maximum power dissipation of 2W, this device offers robust performance. The DC current gain (hFE) is a minimum of 40 at 4A and 1V. Collector cutoff current is specified at a maximum of 10µA, and Vce saturation is 1V at 400mA collector current. This component is supplied in a D2PAK surface mount package (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) and is suitable for use in industrial automation, power supply, and automotive sectors. Operating temperature range is -55°C to 150°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 4A, 1V
Frequency - Transition50MHz
Supplier Device PackageD2PAK
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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