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MJB41CT4

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MJB41CT4

TRANS NPN 100V 6A D2PAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJB41CT4 is a high-performance NPN bipolar junction transistor designed for demanding applications. This component offers a 100V collector-emitter breakdown voltage (Vce) and a maximum collector current (Ic) of 6A, making it suitable for power switching and amplification circuits. The MJB41CT4 features a transition frequency of 3MHz and a maximum power dissipation of 2W. Its DC current gain (hFE) is a minimum of 15 at 3A and 4V, with a Vce saturation of 1.5V at 600mA and 6A. The transistor is packaged in a surface-mount D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB) for efficient thermal management and PCB integration. Operating temperature ranges from -65°C to 150°C. This device finds use in power supplies, motor control, and general-purpose amplification across various industrial and consumer electronics sectors. The MJB41CT4 is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 600mA, 6A
Current - Collector Cutoff (Max)700µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 3A, 4V
Frequency - Transition3MHz
Supplier Device PackageD2PAK
Current - Collector (Ic) (Max)6 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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