MJ15020
POWER BIPOLAR TRANSISTOR, 4A, 25Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MJ15020 is an NPN bipolar junction transistor designed for high-power applications. Featuring a 250 V collector-emitter breakdown voltage and a continuous collector current capability of 4 A, this device is rated for a maximum power dissipation of 150 W. The MJ15020 exhibits a transition frequency of 20 MHz and a minimum DC current gain (hFE) of 30 at 1 A collector current and 4 V collector-emitter voltage. Its low saturation voltage of 1 V at 100 mA base current and 1 A collector current, along with a collector cutoff current of 500 µA, make it suitable for robust power amplification and switching circuits. Packaged in a TO-204 (TO-3) through-hole metal can, this component is ideal for use in audio amplifiers, power supplies, and industrial control systems. The operating temperature range is -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1A, 4V |
| Frequency - Transition | 20MHz |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 150 W |
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