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MJ15011G

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MJ15011G

TRANS NPN 250V 10A TO204

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJ15011G is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a breakdown voltage (Vce) of 250V and a continuous collector current (Ic) capability of 10A, with a maximum power dissipation of 200W. The MJ15011G exhibits a minimum DC current gain (hFE) of 20 at 2A/2V and a saturation voltage (Vce(sat)) of 1V at 400mA/4A. It is housed in a TO-204 (TO-3) package, suitable for through-hole mounting. This transistor is commonly utilized in power switching and amplification circuits across various industrial sectors, including power supplies, audio amplifiers, and motor control systems. Operating temperature range is -65°C to 200°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 4A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 2A, 2V
Frequency - Transition-
Supplier Device PackageTO-204 (TO-3)
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max200 W

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