MJ14001G
TRANS PNP 60V 60A TO204Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi MJ14001G is a PNP bipolar junction transistor (BJT) designed for high-power applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 60A. With a maximum power dissipation of 300W, it is suitable for demanding tasks. The MJ14001G exhibits a minimum DC current gain (hFE) of 15 at 50A and 3V. Its saturation voltage is specified at a maximum of 3V at 12A base current and 60A collector current. The transistor is housed in a TO-204 (TO-3) package, facilitating through-hole mounting. Operating temperature range is -65°C to 200°C. This component finds application in power supply regulation and audio amplifier circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | TO-204AE |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 12A, 60A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 50A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-204 (TO-3) |
| Current - Collector (Ic) (Max) | 60 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 W |
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