Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

MJ11032

Banner
productimage

MJ11032

TRANS NPN DARL 120V 50A TO204

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

The onsemi MJ11032 is an NPN Darlington bipolar junction transistor engineered for high-power applications. This component offers a 120V collector-emitter breakdown voltage and a continuous collector current rating of 50A, with a maximum power dissipation of 300W. Featuring a substantial minimum DC current gain (hFE) of 1000 at 25A and 5V, it is suitable for demanding switching and amplification tasks. The saturation voltage at 500mA base current and 50A collector current is 3.5V maximum. Encased in a TO-204 (TO-3) package, this device is designed for through-hole mounting and operates within a temperature range of -55°C to 200°C. The MJ11032 finds utility in power supply regulation, motor control, and audio amplifiers.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-204AE
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Frequency - Transition-
Supplier Device PackageTO-204 (TO-3)
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max300 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
MJE200STU

TRANS NPN 25V 5A TO126-3

product image
MMBT2907-D87Z

TRANS PNP 40V 0.8A SOT23-3

product image
SMMBTA42LT3G

TRANS NPN 300V 0.5A SOT23-3