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MJ11030G

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MJ11030G

TRANS NPN DARL 90V 50A TO204

Manufacturer: onsemi

Categories: Single Bipolar Transistors

Quality Control: Learn More

onsemi MJ11030G is a high-power NPN Darlington bipolar transistor. This component offers a collector-emitter breakdown voltage of 90V and a continuous collector current capability of 50A (IC(max)). It features a substantial DC current gain (hFE) of 1000 minimum at 25A and 5V, and a low saturation voltage of 3.5V maximum at 500mA base current and 50A collector current. With a maximum power dissipation of 300W, it is suitable for demanding applications. The TO-204AE (TO-3) package with through-hole mounting is designed for robust thermal management. This device finds utility in power switching, motor control, and general-purpose amplification within industrial and automotive sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-204AE
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Frequency - Transition-
Supplier Device PackageTO-204 (TO-3)
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)90 V
Power - Max300 W

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