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MJ11030

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MJ11030

TRANS NPN DARL 90V 50A TO204

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi MJ11030 is a high-power NPN Darlington bipolar transistor. This device features a 90V collector-emitter breakdown voltage and a maximum collector current of 50A. With a significant 300W power dissipation and a minimum DC current gain of 1000 at 25A and 5V, it is well-suited for demanding applications. The saturation voltage at 500mA base current and 50A collector current is a maximum of 3.5V. Designed for through-hole mounting, it utilizes the TO-204 (TO-3) package. The operating temperature range is -55°C to 200°C (TJ). This component finds application in power switching and amplification circuits, particularly in industrial and automotive sectors requiring robust performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-204AE
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.5V @ 500mA, 50A
Current - Collector Cutoff (Max)2mA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 25A, 5V
Frequency - Transition-
Supplier Device PackageTO-204 (TO-3)
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)90 V
Power - Max300 W

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