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MJ11021G

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MJ11021G

TRANS PNP DARL 250V 15A TO204

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi MJ11021G is a high-power PNP Darlington bipolar junction transistor (BJT) designed for demanding applications. This component offers a robust 250V collector-emitter breakdown voltage and a continuous collector current capability of 15A, with a maximum power dissipation of 175W. Featuring a minimum DC current gain (hFE) of 400 at 10A and 5V, it provides significant amplification. The saturation voltage (Vce Sat) is specified at a maximum of 3.4V for a base current of 150mA and collector current of 15A. Its TO-204 (TO-3) package with through-hole mounting facilitates efficient heat dissipation and straightforward integration into power supply circuits, motor control systems, and industrial automation. The operating temperature range is -65°C to 200°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3.4V @ 150mA, 15A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce400 @ 10A, 5V
Frequency - Transition-
Supplier Device PackageTO-204 (TO-3)
Current - Collector (Ic) (Max)15 A
Voltage - Collector Emitter Breakdown (Max)250 V
Power - Max175 W

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