MCH3109-TL-E
TRANS PNP 30V 3A 3MCPHManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MCH3109-TL-E is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage (Vce) of 30V and a continuous collector current (Ic) capability of up to 3A. With a transition frequency (fT) of 380MHz and a maximum power dissipation of 800mW, it is suitable for switching and amplification circuits. Key parameters include a minimum DC current gain (hFE) of 200 at 500mA and 2V, and a maximum Vce(sat) of 155mV at 75mA and 1.5A. The device features a low collector cutoff current (ICBO) of 100nA and operates at junction temperatures up to 150°C. Packaged in a 3-MCPH (SC-70, SOT-323) format and supplied on tape and reel, this transistor finds application in various consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 155mV @ 75mA, 1.5A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 500mA, 2V |
| Frequency - Transition | 380MHz |
| Supplier Device Package | 3-MCPH |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
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