MBT35200MT1G
TRANS PNP 35V 2A 6TSOPManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi MBT35200MT1G is a PNP bipolar junction transistor designed for demanding applications requiring robust performance. This component features a collector-emitter breakdown voltage of 35V and a maximum collector current of 2A, making it suitable for power switching and amplification tasks. With a transition frequency of 100MHz and a minimum DC current gain (hFE) of 100 at 1.5A and 1.5V, it offers efficient signal processing. The device comes in a 6-TSOP (SOT-23-6 Thin) surface mount package, facilitating compact board designs. Its maximum power dissipation is 625mW, and it operates across a wide temperature range of -55°C to 150°C. The MBT35200MT1G is commonly utilized in consumer electronics, industrial control systems, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 310mV @ 20mA, 2A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1.5A, 1.5V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | 6-TSOP |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 35 V |
| Power - Max | 625 mW |
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