KST5401MTF
TRANS PNP 150V 0.5A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KST5401MTF is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a 150V collector-emitter breakdown voltage and a continuous collector current capability of up to 500mA. With a transition frequency of 300MHz and a maximum power dissipation of 350mW, it is suitable for use in consumer electronics and industrial control systems. The device is housed in a SOT-23-3 surface-mount package, supplied on tape and reel. Key electrical parameters include a minimum DC current gain (hFE) of 60 at 50mA, 5V, and a collector-emitter saturation voltage (Vce(sat)) of 500mV at 5mA, 50mA. The collector cutoff current (ICBO) is rated at a maximum of 50nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 350 mW |
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