KST5089MTF
TRANS NPN 25V 0.05A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KST5089MTF is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector current of up to 50 mA and a collector-emitter breakdown voltage of 25 V. Featuring a transition frequency of 50 MHz and a maximum power dissipation of 350 mW, it is suitable for general-purpose amplification and switching. The device exhibits a minimum DC current gain (hFE) of 400 at 100 µA collector current and 5 V collector-emitter voltage. The Vce(sat) is specified at a maximum of 500 mV for 1 mA base current and 10 mA collector current. Packaged in a SOT-23-3 (TO-236-3, SC-59) format, it is supplied on tape and reel. This transistor finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 400 @ 100µA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 25 V |
| Power - Max | 350 mW |
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