KST4125MTF
TRANS PNP 30V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KST4125MTF is a PNP Bipolar Junction Transistor (BJT) designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage (Vce) of 30 V and a continuous collector current (Ic) capability of 200 mA. The DC current gain (hFE) is specified at a minimum of 50 at 2 mA collector current and 1 V collector-emitter voltage. With a transition frequency (fT) of 200 MHz and a maximum power dissipation of 350 mW, it is suitable for various electronic circuits. The transistor is housed in a compact SOT-23-3 surface-mount package, supplied on tape and reel. Applications include consumer electronics, industrial control, and telecommunications equipment. Collector cutoff current (Icbo) is rated at a maximum of 50 nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 350 mW |
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