KST4123MTF
TRANS NPN 30V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KST4123MTF is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This device features a 30V collector-emitter breakdown voltage and a maximum continuous collector current of 200mA. With a transition frequency of 250MHz, it is suitable for moderate frequency operations. The KST4123MTF has a maximum power dissipation of 350mW and a low collector cutoff current of 50nA. It offers a minimum DC current gain (hFE) of 50 at 2mA collector current and 1V collector-emitter voltage. The Vce(sat) is specified at 300mV maximum for a base current of 5mA and a collector current of 50mA. This transistor is provided in a SOT-23-3 surface mount package, supplied on tape and reel. Common applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2mA, 1V |
| Frequency - Transition | 250MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 350 mW |