KST3904LGEMTF
TRANS NPN 40V 0.2A SOT23-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KST3904LGEMTF is an NPN bipolar junction transistor (BJT) featuring a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. This device offers a transition frequency of 300MHz and a maximum power dissipation of 350mW. It is supplied in a SOT-23-3 surface mount package, ideal for compact designs. The minimum DC current gain (hFE) is specified as 100 at 10mA collector current and 1V collector-emitter voltage. Saturation voltage (Vce(sat)) is a maximum of 300mV at 5mA base current and 50mA collector current. This transistor is commonly utilized in general-purpose amplification and switching applications across various electronic systems. The component is provided on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | - |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 350 mW |
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