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KSP76BU

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KSP76BU

TRANS PNP DARL 50V 0.5A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSP76BU is a PNP Darlington bipolar junction transistor designed for high gain applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It exhibits a typical DC current gain (hFE) of 10000 at 100mA and 5V. Saturation voltage (Vce Sat) is rated at 1.5V maximum at 100µA base current and 100mA collector current. The KSP76BU is packaged in a standard TO-92-3 (TO-226-3) through-hole configuration and has a power dissipation rating of 625mW. Its maximum operating junction temperature is 150°C. This transistor is suitable for use in various industrial and consumer electronics applications requiring significant current amplification.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 100µA, 100mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max625 mW

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