KSP5179TA
TRANS NPN 12V 0.05A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSP5179TA is an NPN bipolar junction transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 50mA. Its transition frequency reaches 2GHz, making it suitable for RF amplification and switching circuits. With a maximum power dissipation of 200mW, it operates effectively within a temperature range of -55°C to 150°C. The transistor is housed in a TO-92-3 package, presented in Tape & Box packaging for efficient automated assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 25 at 3mA, 1V and a collector cutoff current of 20nA. The Vce saturation voltage is specified at 400mV maximum for 1mA base current and 10mA collector current. This component finds application in telecommunications, consumer electronics, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 3mA, 1V |
| Frequency - Transition | 2GHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 12 V |
| Power - Max | 200 mW |
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