KSP45TF
TRANS NPN 350V 0.3A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSP45TF is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a high collector-emitter breakdown voltage of 350 V and a continuous collector current capability of 300 mA. The KSP45TF offers a maximum power dissipation of 625 mW and a minimum DC current gain (hFE) of 50 at 10 mA collector current and 10 V collector-emitter voltage. Its saturation voltage (Vce(sat)) is rated at a maximum of 750 mV with a base current of 5 mA and a collector current of 50 mA. The transistor is housed in a TO-92-3 package, suitable for through-hole mounting. The operating junction temperature range extends up to 150°C. This device is commonly utilized in power supply circuits, voltage regulators, and general industrial control systems. The KSP45TF is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 300 mA |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 625 mW |
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