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KSP45BU

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KSP45BU

TRANS NPN 350V 0.3A TO92-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSP45BU is an NPN bipolar junction transistor designed for high voltage applications. It features a maximum collector-emitter breakdown voltage of 350V and a continuous collector current capability of 300mA. With a power dissipation rating of 625mW and a minimum DC current gain (hFE) of 50 at 10mA and 10V, this component is suitable for use in power supply circuits and general-purpose amplification. The transistor exhibits a Vce(sat) of 750mV at 5mA/50mA and a collector cutoff current of 500nA (max). Packaged in a TO-92-3 (TO-226AA) through-hole configuration, the KSP45BU operates across an extended temperature range up to 150°C (TJ). This device finds application in industrial control and power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic750mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 10V
Frequency - Transition-
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)300 mA
Voltage - Collector Emitter Breakdown (Max)350 V
Power - Max625 mW

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