KSP12TA
TRANS NPN DARL 20V TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSP12TA is an NPN Darlington bipolar junction transistor designed for high current gain applications. Featuring a breakdown voltage (Vceo) of 20V and a maximum power dissipation of 625mW, this component offers a minimum DC current gain (hFE) of 20000 at 10mA collector current and 5V Vce. Saturation voltage (Vce(sat)) is specified at a maximum of 1V for a 10µA base current and 10mA collector current. The collector cutoff current (Icbo) is rated at 100nA. This transistor utilizes a TO-92-3 (TO-226AA) package with formed leads, suitable for through-hole mounting. The KSP12TA operates across an extended temperature range up to 150°C (TJ). It is commonly employed in general purpose amplification and switching applications across various industrial and consumer electronics sectors. The component is supplied in Tape & Box (TB) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 10µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20000 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-92-3 |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 625 mW |
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