KSP05BU
TRANS NPN 60V 0.5A TO92-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSP05BU is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of up to 500mA. With a transition frequency of 100MHz and a maximum power dissipation of 625mW, it offers a DC current gain (hFE) of a minimum of 50 at 100mA and 1V. The saturation voltage (Vce Sat) is specified at a maximum of 250mV at 10mA base current and 100mA collector current. The KSP05BU is housed in a TO-92-3 (TO-226-3) through-hole package and operates within a junction temperature range of -55°C to 150°C. This transistor finds utility in various industrial and consumer electronics, including power supplies, audio amplifiers, and control circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 100mA, 1V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 625 mW |
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