KSH45H11ITU
TRANS PNP 80V 8A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSH45H11ITU is a PNP bipolar junction transistor (BJT) designed for robust power applications. This component offers a continuous collector current capability of 8 A and a collector-emitter breakdown voltage of 80 V, making it suitable for demanding switching and amplification tasks. It features a transition frequency of 40 MHz and a maximum power dissipation of 1.75 W. The DC current gain (hFE) is a minimum of 40 at 4 A and 1 V. With a Vce(sat) of 1 V at 400 mA and 8 A, it exhibits efficient conduction characteristics. The transistor operates within a temperature range of -55°C to 150°C. It is supplied in an IPAK (TO-251AA) package with short leads, facilitating through-hole mounting. This device finds application in industrial motor control, power supply units, and general-purpose power switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 40MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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