KSH44H11TM
TRANS NPN 80V 8A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSH44H11TM is an NPN bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 8A, with a maximum collector current cutoff of 10µA. Its DC current gain (hFE) is a minimum of 40 at 4A collector current and 1V collector-emitter voltage. The transistor has a transition frequency of 50MHz and a maximum power dissipation of 1.75W. Saturation voltage (Vce) is specified at a maximum of 1V for an operating point of 400mA base current and 8A collector current. Packaged in a TO-252-3 DPAK, this device is suitable for use in industrial and automotive applications requiring robust switching and amplification capabilities. The KSH44H11TM is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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