KSH44H11ITU
TRANS NPN 80V 8A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSH44H11ITU is an NPN bipolar junction transistor (BJT) designed for robust power switching applications. Featuring a 80V collector-emitter breakdown voltage and a continuous collector current rating of 8A, this component is suitable for demanding power management tasks. Its 50MHz transition frequency allows for efficient operation in moderate frequency switching circuits. The device dissipates a maximum of 1.75W and offers a low saturation voltage of 1V at 400mA base current and 8A collector current. The DC current gain (hFE) is a minimum of 40 at 4A collector current and 1V Vce. This transistor is housed in an IPAK (TO-251AA) package with short leads, facilitating through-hole mounting. It operates reliably up to a junction temperature of 150°C. The KSH44H11ITU finds application in power supplies, motor control, and general-purpose amplification across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 400mA, 8A |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 4A, 1V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1.75 W |
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