KSH31CTF
TRANS NPN 100V 3A DPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSH31CTF is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 3A, making it suitable for power switching and amplification. Featuring a transition frequency of 3MHz and a maximum power dissipation of 1.56W, the KSH31CTF is engineered for efficient operation. The transistor exhibits a minimum DC current gain (hFE) of 10 at 3A and 4V. Its Vce saturation is specified at a maximum of 1.2V at 375mA base current and 3A collector current. The KSH31CTF is provided in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component finds application in industrial control, power management, and general-purpose switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 375mA, 3A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 3A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | DPAK |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |
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