KSH29ITU
TRANS NPN 40V 1A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSH29ITU is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole component, housed in an IPAK (TO-251AA) package, offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 1A. With a maximum power dissipation of 1.56W and an operating junction temperature of 150°C, it is suitable for demanding environments. Key electrical characteristics include a minimum DC current gain (hFE) of 15 at 1A and 4V, a transition frequency of 3MHz, and a Vce(sat) of 700mV at 125mA and 1A. The collector cutoff current is specified at a maximum of 50µA. This component finds application in power supply circuits, motor control, and lighting control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1.56 W |
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