KSH29CITU
TRANS NPN 100V 1A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSH29CITU is an NPN bipolar junction transistor designed for general-purpose switching and amplification applications. This component offers a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 1A. It features a maximum power dissipation of 1.56W and a transition frequency of 3MHz. The minimum DC current gain (hFE) is specified at 15 at 1A collector current and 4V collector-emitter voltage. The saturation voltage (Vce Sat) is a maximum of 700mV at 125mA base current and 1A collector current. The device operates within a junction temperature range of 150°C. The KSH29CITU is provided in an IPAK package, facilitating through-hole mounting. This transistor is suitable for use in industrial automation, power management, and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 50µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 4V |
| Frequency - Transition | 3MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.56 W |
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