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KSH122ITU

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KSH122ITU

TRANS NPN DARL 100V 8A IPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSH122ITU is an NPN Darlington bipolar junction transistor designed for robust power switching applications. This component features a 100V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of 8A, with a maximum power dissipation of 1.75W. It exhibits a high minimum DC current gain (hFE) of 1000 at 4A and 4V, characteristic of its Darlington configuration. The saturation voltage (Vce Sat) is 4V at 80mA collector current and 8A collector current. The IPAK package, specifically TO-251-3 Short Leads or TO-251AA, facilitates through-hole mounting. Operating temperature range extends to 150°C (TJ). Applications include power supply regulation, audio amplifiers, and general-purpose switching in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 80mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 4A, 4V
Frequency - Transition-
Supplier Device PackageIPAK
Current - Collector (Ic) (Max)8 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.75 W

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