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KSH112TF

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KSH112TF

TRANS NPN DARL 100V 2A DPAK

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSH112TF is an NPN Darlington bipolar junction transistor designed for high-gain switching applications. Featuring a collector-emitter breakdown voltage of 100V and a continuous collector current capability of 2A, this component offers a minimum DC current gain (hFE) of 1000 at 2A and 3V. Its transition frequency is 25MHz, and it dissipates a maximum power of 1.75W. The device is housed in a TO-252-3, DPAK package, suitable for surface mounting. Typical applications include power switching and amplification circuits in industrial and automotive sectors. The KSH112TF operates at junction temperatures up to 150°C.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Frequency - Transition25MHz
Supplier Device PackageDPAK
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.75 W

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