KSH112ITU
TRANS NPN DARL 100V 2A IPAKManufacturer: onsemi
Categories: Single Bipolar Transistors
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The onsemi KSH112ITU is an NPN Darlington bipolar junction transistor (BJT) designed for high-current switching and amplification applications. Featuring a 100V collector-emitter breakdown voltage and a maximum continuous collector current of 2A, this component offers a minimum DC current gain (hFE) of 1000 at 2A and 3V. Its transition frequency is rated at 25MHz, with a maximum power dissipation of 1.75W. The KSH112ITU is housed in an IPAK (TO-251AA) package with short leads, facilitating through-hole mounting. It operates across a wide temperature range up to 150°C (TJ). This device finds application in power supply regulation, motor control, and general-purpose switching circuits within industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 20µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 2A, 3V |
| Frequency - Transition | 25MHz |
| Supplier Device Package | IPAK |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.75 W |
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