KSE803STU
TRANS NPN DARL 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSE803STU is an NPN Darlington bipolar junction transistor (BJT) designed for demanding applications. This through-hole component features a robust TO-126-3 package, enabling efficient heat dissipation up to 40W. It boasts a high collector current capability of 4A and a collector-emitter breakdown voltage rating of 80V. With a minimum DC current gain (hFE) of 750 at 2A and 3V, the KSE803STU offers significant amplification for power control and switching circuits. The device exhibits a Vce saturation of 2.8V at 40mA and 2A, and a collector cutoff current of 100µA maximum. Operating temperature range extends up to 150°C (TJ). This component is commonly utilized in power supply regulation, audio amplification, and general-purpose switching applications within consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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