KSE803S
TRANS NPN DARL 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSE803S, an NPN Darlington bipolar junction transistor, offers a robust solution for high-current switching and amplification applications. This device features a maximum collector current (Ic) of 4A and a collector-emitter breakdown voltage (Vce) of 80V. The KSE803S exhibits a minimum DC current gain (hFE) of 750 at 2A and 3V, with a saturation voltage (Vce(sat)) of 2.8V at 40mA and 2A. Dissipating up to 40W, it is housed in a TO-126-3 (TO-225AA) package suitable for through-hole mounting. The operating temperature range extends to 150°C (TJ). This component finds utility in power supply circuits, motor control, and general-purpose amplification within industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.8V @ 40mA, 2A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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