KSE802STU
TRANS NPN DARL 80V 4A TO126-3Manufacturer: onsemi
Categories: Single Bipolar Transistors
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onsemi KSE802STU is an NPN Darlington bipolar junction transistor designed for high-current switching and amplification applications. This device features a maximum collector current (Ic) of 4 A and a collector-emitter breakdown voltage (Vce) of 80 V. It exhibits a significant DC current gain (hFE) of at least 750 at 1.5 A and 3 V. The transistor offers a low saturation voltage (Vce Sat) of 2.5 V maximum at 30 mA base current and 1.5 A collector current. With a maximum power dissipation of 40 W and an operating temperature range up to 150°C (TJ), it is suitable for demanding applications. The KSE802STU is packaged in a TO-126-3 (TO-225AA) through-hole configuration, commonly utilized in industrial controls, power supplies, and general-purpose amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 30mA, 1.5A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 1.5A, 3V |
| Frequency - Transition | - |
| Supplier Device Package | TO-126-3 |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 40 W |
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