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KSE801STU

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KSE801STU

TRANS NPN DARL 60V 4A TO126-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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onsemi KSE801STU is an NPN Darlington bipolar junction transistor designed for power switching applications. This component features a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 4A, with a maximum power dissipation of 40W. It offers a minimum DC current gain (hFE) of 750 at 2A and 3V. The saturation voltage (Vce(sat)) is specified at a maximum of 2.8V for an input base current of 40mA driving a collector current of 2A. The transistor is housed in a TO-126-3 (TO-225AA) package suitable for through-hole mounting and operates at junction temperatures up to 150°C. This device is commonly utilized in industrial power supplies and motor control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.8V @ 40mA, 2A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce750 @ 2A, 3V
Frequency - Transition-
Supplier Device PackageTO-126-3
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max40 W

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