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KSE45H11TU

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KSE45H11TU

TRANS PNP 80V 10A TO220-3

Manufacturer: onsemi

Categories: Single Bipolar Transistors

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The onsemi KSE45H11TU is a PNP bipolar junction transistor designed for demanding applications. It features a maximum collector current (Ic) of 10 A and a collector-emitter breakdown voltage (Vce) of 80 V. This device exhibits a minimum DC current gain (hFE) of 60 at 2 A and 1 V, with a transition frequency of 40 MHz. The KSE45H11TU has a maximum power dissipation of 1.67 W and a collector cutoff current (Ic) of 10 µA. It operates at temperatures up to 150°C (TJ). The transistor type is PNP, and it is housed in a TO-220-3 package, suitable for through-hole mounting. The saturation voltage (Vce Sat) is 1 V at 400 mA and 8 A. This component is widely utilized in power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tube
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 400mA, 8A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 2A, 1V
Frequency - Transition40MHz
Supplier Device PackageTO-220-3
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1.67 W

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